Small Signal Characteristics of Thin Film Single Halo SOI MOSFET for Mixed Mode Applications
نویسندگان
چکیده
In this paper we report a study on the small signal characterization and simulation of Single Halo (SH) thin film Silicon-on-Insulators (SOI) nMOSFETs for analog and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. Besides excellent DC output characteristics and experimental characterization results on these devices show better Vth – L roll-off, low DIBL, higher breakdown voltages and kink free operation. Small signal characterization on these devices shows higher AC transconductance, higher output resistance and better dynamic intrinsic gain (gmRo) in comparison with the conventional (CON) homogenously doped SOI MOSFETs. Also, the low drain junction capacitance as a result of low impurity concentration near the drain region is beneficial for improved circuit performance.
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Small Signal Characterization of Thin Film Single Halo SOI MOSFET For Mixed Mode Analog and Digital Applications
In this paper for the first time we report a study on the small signal characterization and simulation of Single Halo (SH) thin film SOI nMOSFETs. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration on the drain side. Besides having excellent dc output characteristics, better Vth – L roll-off control, low DIBL, hig...
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